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  rev.1.00, sep.22.2003, page 1 of 11 M66515FP laser diode driver/controller rej03f0084-0100z rev.1.0 sep.22.2003 description the m66515 is a laser diode driver/controller that performs drive and controls the laser power control of a type of semiconductor laser diode the anode of which is connected, with the cathode of a photodiode for monitoring, to a stem in which the semiconductor laser diode anode and monitoring photo diode cathode are connected to the stem. this ic has a sink-type laser driving current output pin, and can drive a laser diode with a bias current of up to a maximum 30 ma and with switched currents of up to 120 ma, switched at rates of up to 40 mbps. the ic incorporates a sample hold circuit, so that a se lf-apc (automatic power control) system, which does not require external laser power control, can be realized. features ? internal sample-and-hold circuit for self-apc configuration ? high-speed switching (40 mbps) ? high driving currents (150 ma max) ? settable bias current (30 ma max) ? single 5 v power supply applications ? equipment employing semiconductor laser diodes function overview the m66515 is a laser diode driver/controller which drives and controls the laser power of a semiconductor laser diode (ld) the anode of which is connected , with the cathode of a photodiode (pd) for monitoring, to a stem (among mitsubishi lasers, n type models). ld driving and laser power control are executed by connecting an external capacitance to the c h pin and applying a reference voltage to the v r pin. the pd current occurring when a ld emits light flows th rough a resistance connected across 1rm and 2rm, resulting in a potential difference (v m ). this v m is compared with the voltage applied to the v r pin, and when v m v r , a constant current sink from the c h pin causes the charge on the external capacitor to be discharged. this operation is performed when the s /h input is "l" (sample); when the s /h input is in the "h" state, the c h pin is in the high-impedance state (hold), regardless of v m , v r and the data input state. the ld driving current consis ts of a switched current i sw , which is controlled by the data input, and i b , a ld bias current which is independent of the data input state.
M66515FP rev.1.00, sep.22.2003, page 2 of 11 pin configuration (top view) description of pin pin name name function ld laser current output connected to the semiconductor ld cathode pd monitor diode input connected to the monitor pd anode r s switching current setting load output connects the load resistance to set the current for switching (i sw ) to gnd r b bias current setting load output connects the load resistance to set the bias current (i b ) to gnd. if i b is not used, this pin should be left open. v b bias current setting voltage input the bias current value (i b ) can be set by applying a voltage to this pin. if i b is not used, this pin should be left open. data switching data input at "l", the current i sw +i b flows to the ld; at "h", the current to the ld is i b 1rm, 2rm load input for monitoring connect a load resist ance to convert the monitor pd current to a voltage across 1rm and 2rm enb laser current enable input when "h", all cu rrent source circuits are turned off ro laser current load output connect a laser current load resistance between this pin and v cc s /h sample hold control input when "l", sample ( apc) operation is performed; when "h", hold (switching) is performed ch hold capacitor load input/output connect a hold capacitor between this pin and gnd. this pin is connected within the m66515 to the sample hold circuit output and i sw current source input. vref reference voltage output output pin for the m66515 internal reference voltage (1.2 v typ) vr reference voltage input a reference voltage is app lied to cause operation of the comparator within the sample hold circuit. when using the reference voltage within the m66515, this pin should be connected to the v ref pin. test test pin pin used for testing at time of shipment of the m66515; should be left open v cc 1 power supply pin 1 power supply for the internal analog system; connect to a positive power supply (+5 v) v cc 2 power supply pin 2 power supply for the internal digital system; connect to a positive power supply (+5 v) gnd1 gnd pin 1 gnd for internal analog system gnd2 gnd pin 2 gnd for internal digital system
M66515FP rev.1.00, sep.22.2003, page 3 of 11 block diagram explanation of operation 1. laser driving current values the values of the laser driving currents i sw and i b can be approximated as follows, if v c is the voltage of the hold capacitor connected to the c h pin. (1) i sw (switched current) here 0 v c v cc -1.8 v, i sw (max) =120 ma, and r s is the value of the resistance connected between the r s pin and gnd (2) i b (bias current) here 0 v b v cc -2.7 v, i b (max) =30 ma, and r b is the value of the resistance connected between the r b pin and gnd 2. switching operation when data ="l", the ld driving current is i sw +i b ; when data ="h", the ld driving current is i b . 3. enb input whereas the laser driving current is controlled by data input by controlling the driving current applied to the laser with the current source in the m66515 turned on, control by enb turns the current source operation on and off. when enb ="l" the current source is turned on, and when enb ="h" the current source is turned off. when enb ="h", the c h pin is forced to "l" level, and the ch arge on the capacitor connected to the c h pin is forcibly discharged. 4. internal reset operation the m66515 incorporates a reset circuit to prevent the flow of excessive current to the laser when power is turned on; when v cc <3.5 v (typ), the internal current source is turned off and the c h pin is forced to "l" level.
M66515FP rev.1.00, sep.22.2003, page 4 of 11 5. ro pin the ro pin is connected to the laser driving curren t load resistance; current essentially equal to i sw flows from this pin. the load resistance is connected between this pin and v cc ; by this means the power dissipation within the ic is reduced. however, the circuit operation requires that the voltage at this pin be 2.5 v or above. hence if the maximum value of i sw is i sw (max), then the maximum value ro(max) of the load resistance ro is as follows. for example, if v cc (min)=4.75 v and i sw (max)=120 ma, then ro(max)=18.8 ? . in other words, when setting the resistance r s such that the maximum value of i sw is 120 ma, ro should be 18.8 ? or lower. 6. sample-and-hold circuit (1) summary of circuit operation the following is a summary of operation of the sample hold circuit within the m66515. a pd current arising upon ld light emission flows through the resistance connected between 1rm and 2rm, giving rise to a potential difference (v m ). this v m is compared with the voltage applied to the pin v r , and if v m v r , pin c h is a constant current sink which discharges the external capacitor. this operation is performed when the s /h input is "l" (sample); when the s /h input is "h", the c h pin is kept in the high-impedance state (hold), regardless of v m , v r , and the data input state. function table input switched state enb s /h vm, vr sw1 sw2 tr1 output h x x off off on fixed at "l" l h x off off off high-impedance state (hold) llv m < vr on off off constant current source (sample) v m > vr off on off constant current sink (sample) x: arbitrary (2) apc operation timing chart an example of an apc operation timing chart for a given sample hold control signal is shown below. in this example, a case is shown in which it is assumed that the direction of the leakage current of the c h pin in the hold state is the direction flowing out from the m66515 (the negative direction).
M66515FP rev.1.00, sep.22.2003, page 5 of 11 7. v cc and gnd pins the v cc 1 and v cc 2 pins and the gnd1 and gnd2 pins are related to the power supply. the internal circuitry connected to these pins is as follows. v cc 1, gnd1: connected to analog circuitry v cc 2, gnd2: connected to digital circuitry the following should be taken into account in designing the actual wiring. (1) wiring widths should be as broad as possible, and drawn-out lengths of wiring should be avoided. (2) the electrolytic capacitor for voltage stability should be positioned close to v cc 1 and gnd1. (3) the bypass capacitor should be positioned close to v cc 2 and gnd2. important information regard ing peripheral element wiring peripheral elements necessary for m 66515 operation should be positioned as close to the m66515 as possible. method of calculating power dissipation the m66515 power dissipation p is essentially given by the following formula. p = i cc v cc + i (ro) i (ro) + i (ld) v (ld) here v (ro) is the ro pin voltage, v (ld) is the ld pin voltage, i (ro) is the ro pin load current, and i (ld) is the ld pin load current. for example, when v cc = 5.25 v, v (ro) = v (ld) = 2.5 v, and i (ro) = i (ld) = 150 ma, the power dissipation when the laser is turned on and off is as follows. (1) when the laser is on ( data = ?l?, i cc = 75 ma): p on = 75 5.25 + 0 + 150 2.5 = 768.8 (mw) (2) when the laser is off ( data = ?h?, i cc = 74 ma): p off = 74 5.25 + 0 + 150 2.5 = 763.5 (mw)
M66515FP rev.1.00, sep.22.2003, page 6 of 11 absolute maximum ratings (unless otherwise noted, ta = ?20 to 70c) symbol parameter conditions value unit v cc power supply voltage ? 0.5 to +7.0 v v i input voltage ch, vr ? 0.3 to v cc v data , enb , s /h ? 0.3 to +7.0 v v o output voltage ro ? 0.5 to +7.0 v i sw switching current 150 ma i b bias current 45 ma pd power dissipation mounted on board, with ta=25c (see note) 1200 mw tstg storage temperature ? 60 to +150 c note: when ta 25c, derating at 9.6 mw/c should be performed. recommended operating conditions (unless otherwise noted, ta = ?20 to 70c) limits symbol parameter min typ max unit v cc power supply voltage 4.75 5.0 5.25 v i sw switching current 120 ma i b bias current 30 ma topr operating ambi ent temperature ? 20 ? 70 c
M66515FP rev.1.00, sep.22.2003, page 7 of 11 electrical characteristics (unless otherwise noted, v cc = 5 v 5%, ta = ?20 to 70c) limits sym- bol parameter measurement conditions min typ max unit mea- sure- ment cir- cuit v ih "h" input voltage data , enb , s /h 2.0 v v il "l" input voltage data , enb , s /h 0.8 v vr reference voltage input vr 0.4 2.0 v vref i o = ?10 a1.2v ta = ?20 to 25 c ?0.9 vref reference voltage output temperature coefficient ta = 25 to 70 c ?0.9 mv/ c 1 v ld operating voltage range ld 2.5 v cc v v i effective voltage upper limit c h v cc ? 1.8 v cc ? 1.4 v v oh "h" output voltage c h enb = 0.8 v, i oh = ?2 ma 4.0 v 1 v ol "l" output voltage c h enb = 0.8 v, i ol = 2 ma 0.6 v 1 v i = 2.7 v 20 a data , enb v i = 0.4 v ?0.2 ma i l input current c h v i = 0 to v cc 1 a ch = 3.0 v, rs = 360 ? , v ld = 2 v 120 ma i sw switching current (see note) ld temperature coefficient ta = 20 to 70 c0.11ma/ c 2 i b bias current (see note) ld vb = 1.2 v, rb = 360 ? , v ld = 2 v 30 ma 2 icg load charging current c h enb = 0.8 v, v o = 0.6 to 4.0 v ?0.66 ?2.0 ma 3 idg load discharge current c h enb = 0.8 v, v o = 0.6 to 4.0 v 0.66 2.0 ma 3 ioz output current in off state c h v o = 0 to v cc , hold state 5 a3 enb = 0.8 v, data = 2.0 v 0.33 50 i off output current when off ld enb = 2.0 v, data = 0.8 v 0.01 50 a2 data = 0 v 54 75 i cc power supply current v cc = 5.25 v, enb = 0 v, c h = 3.0 v, v b = 1.2 v, r s = 300 ? , r b = 360 ? , r o = ld = 5.0 v data = 4.5 v 52 74 ma 4 *typical values are for ta = 25c, v cc = 5 v. note: these quantities indicate the input voltage-ou tput current conversion characteristic; i sw and i b should be used within the range of the rated values under recommended operating conditions.
M66515FP rev.1.00, sep.22.2003, page 8 of 11 switching characteristics (ta = 25c, v cc = 5 v) measurement pin limits symbol item input output measurement conditions min. typ. max. unit f op operating frequency 40 mbps i ld(l) = 0 ma i ld(h) = 60 ma (note 1) 7 s t rp1 circuit response time 1 c h voltage ld current i ld(l) = 55 ma i ld(h) = 65 ma (note 1) 2 s i pd(l) = 0 ma i pd(h) = 2 ma rm = 1 k ? (note 2) 15 s t rp2 circuit response time 2 pd current c h voltage | ? i pd | = 0.2 ma rm = 1 k ? (note 2) 8 s t rp3 circuit response time 3 s /h voltage c h voltage i pd = 0 ma, 2 ma rm = 1 k ? , vr = 1.2 v (note 3) 1 s t on circuit turn-on time enb voltage ld current i ld(h) = 60 ma (note 4) 5 s t off circuit turn-off time enb voltage ld current i ld(h) = 60 ma (note 4) 2 s note 1. measurement circuit and timing chart
M66515FP rev.1.00, sep.22.2003, page 9 of 11 note 2. measurement circuit and timing chart note 3. measurement circuit and timing chart
M66515FP rev.1.00, sep.22.2003, page 10 of 11 note 4. measurement circuit and timing chart application example
M66515FP rev.1.00, sep.22.2003, page 11 of 11 package dimensions sop20-p-300-1.27 weight(g) ? jedec code 0.26 eiaj package code lead material cu alloy 20p2n-a plastic 20pin 300mil sop symbol min nom max a a 2 b c d e l l 1 y dimension in millimeters h e a 1 i 2 ? ? .35 0 0 .18 0 .5 12 .2 5 ? .5 7 .4 0 ? ? ? ? .27 1 .1 0 ? .8 1 .4 0 .2 0 .6 12 .3 5 .27 1 .8 7 .6 0 .25 1 ? ? .62 7 ? .2 0 .1 2 ? .5 0 .25 0 .7 12 .4 5 ? .1 8 .8 0 ? .1 0 ? b 2 0.76 ? 0 8 e e 1 20 11 10 1 h e e d e y f a a 2 a 1 l 1 l c e b 2 e 1 i 2 recommended mount pad detail f detail g z z 1 x ? ? z 1 ? 0.585 ? ? ? ? 0.735 0.25 z b x m g mmp
? 2003. renesas technolo gy corp., all ri g hts reserved. printed in japan . colo p hon 1.0 keep safet y first in y our circuit desi g ns ! 1. renesas technolo gy corp. puts the maximum effort into makin g semiconductor products better and more reliable, but there is alwa y s the possibilit y that trouble m a y occur with them. trouble with semiconductors ma y lead to personal in j ur y , fire or propert y dama g e . remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placem ent of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas tech nology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci rcumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technolo gy corp. is necessar y to reprint or reproduce in whole or in part these materials . 7 . if these products or technolo g ies are sub j ect to the japanese export control restrictions, the y must be exported under a license from the japanese g overnment and cannot b e imported into a countr y other than the approved destination. an y diversion or reexport contrar y to the export control laws and re g ulatio n s of japan and/or the countr y of destination is prohibited . 8. please contact renesas technolo gy corp. for further details on these materials or the products contained therein . s ales strate g ic plannin g div. nippon bld g ., 2-6-2, ohte-machi, chi y oda-ku, tok y o 100-0004, japa n htt p ://www.renesas.co m renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500 fax: <1> (408) 382-7501 renesas technology europe limited. dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, united kingdom tel: <44> (1628) 585 100, fax: <44> (1628) 585 900 renesas technology europe gmbh dornacher str. 3, d-85622 feldkirchen, germany tel: <49> (89) 380 70 0, fax: <49> (89) 929 30 11 renesas technology hong kong ltd. 7/f., north tower, world finance centre, harbour city, canton road, hong kong tel: <852> 2265-6688, fax: <852> 2375-6836 renesas technology taiwan co., ltd. fl 10, #99, fu-hsing n. rd., taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. 26/f., ruijin building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1, harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices


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